characteristic / test conditionsdrain-source breakdown voltage (v gs = 0v, i d = 250a) on state drain current 2 (v ds > i d(on) x r ds(on) max, v gs = 10v) drain-source on-state resistance 2 (v gs = 10v, i d = 46.5a) zero gate voltage drain current (v ds = 400v, v gs = 0v) zero gate voltage drain current (v ds = 320v, v gs = 0v, t c = 125c) gate-source leakage current (v gs = 30v, v ds = 0v) gate threshold voltage (v ds = v gs , i d = 5ma) 050-5892 rev a 7-2004 maximum ratings all ratings: t c = 25c unless otherwise specified. symbol v dss i d i dm v gs v gsm p d t j ,t stg t l i ar e ar e as parameterdrain-source voltage continuous drain current @ t c = 25c pulsed drain current 1 gate-source voltage continuousgate-source voltage transient total power dissipation @ t c = 25c linear derating factoroperating and storage junction temperature range lead temperature: 0.063" from case for 10 sec. avalanche current 1 (repetitive and non-repetitive) repetitive avalanche energy 1 single pulse avalanche energy 4 unit volts amps volts watts w/c c amps mj static electrical characteristics symbol bv dss i d(on) r ds(on) i dss i gss v gs(th) unit volts amps ohms ana volts min typ max 400 93 0.035 250 1000 100 24 APT40M35JVFR 400 93 372 3040 700 5.6 -55 to 150 300 9350 3600 APT40M35JVFR 400v 93a 0.035 ?? ?? ? g d s sot-227 g s s d isotop ? "ul recognized" caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com power mos v ? is a new generation of high voltage n-channel enhancement mode power mosfets. this new technology minimizes the jfet effect,increases packing density and reduces the on-resistance. power mos v ? also achieves faster switching speeds through optimized gate layout. faster switching avalanche energy rated lower leakage popular sot-227 package fast recovery body diode power mos v ? fredfet downloaded from: http:///
dynamic characteristics APT40M35JVFR 050-5892 rev a 7-2004 1 repetitive rating: pulse width limited by maximum junction 3 see mil-std-750 method 3471 temperature. 4 starting t j = +25c, l = 0.83mh, r g = 25 ? , peak i l = 93a 2 pulse test: pulse width < 380 s, duty cycle < 2% 5 i s i d = 93a, di / dt = 100a/s, t j 150c, r g = 2.0 ? v r = 400v. apt reserves the right to change, without notice, the specifications and information contained herein. source-drain diode ratings and characteristics characteristic / test conditionscontinuous source current (body diode) pulsed source current 1 (body diode) diode forward voltage 2 (v gs = 0v, i s = - 93a) peak diode recovery dv / dt 5 reverse recovery time(i s = -93a, di / dt = 100a/s) reverse recovery charge(i s = -93a, di / dt = 100a/s) peak recovery current(i s = -93a, di / dt = 100a/s) symbol i s i sm v sd dv / dt t rr q rr i rrm unit amps volts v/ns ns c amps symbol c iss c oss c rss q g q gs q gd t d (on) t r t d (off) t f characteristicinput capacitance output capacitance reverse transfer capacitance total gate charge 3 gate-source charge gate-drain ("miller ") charge turn-on delay time rise time turn-off delay time fall time test conditions v gs = 0v v ds = 25v f = 1 mhz v gs = 10v v dd = 200v i d = 93a @ 25c v gs = 15v v dd = 200v i d = 93a @ 25c r g = 0.6 ? min typ max 16800 20160 2400 3360 1070 1605 710 1065 80 120 340 510 20 40 30 60 75 115 14 28 unit pf nc ns min typ max 93 372 1.3 15 t j = 25c 300 t j = 125c 600 t j = 25c 2.2 t j = 125c 9 t j = 25c 16 t j = 125c 33 thermal / package characteristics symbol r jc r ja v isolation torque min typ max 0.18 40 2500 10 unit c/w volts lbin characteristicjunction to case junction to ambient rms voltage (50-60 hz sinusoidal waveform from terminals to mounting base for 1 min.) maximum torque for device mounting screws and electrical terminations. z jc , thermal impedance (c/w) 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 rectangular pulse duration (seconds) figure 1, maximum effective transient thermal impedance, junction-to-case vs pulse duration 0.20.1 0.050.01 0.0050.001 0.0005 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm 0.1 single pulse 0.02 0.05 0.2 d=0.5 0.01 downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 2, typical output characteristics figure 3, typical output characteristics v gs , gate-to-source voltage (volts) i d , drain current (amperes) figure 4, typical transfer characteristics figure 5, r ds (on) vs drain current t c , case temperature (c) t j , junction temperature (c) figure 6, maximum drain current vs case temperature figure 7, breakdown voltage vs temperature t j , junction temperature (c) t c , case temperature (c) figure 8, on-resistance vs. temperature figure 9, threshold voltage vs temperature r ds (on), drain-to-source on resistance i d , drain current (amperes) i d , drain current (amperes) i d , drain current (amperes) (normalized) v gs (th), threshold voltage bv dss , drain-to-source breakdown r ds (on), drain-to-source on resistance i d , drain current (amperes) (normalized) voltage (normalized) APT40M35JVFR 050-5892 rev a 7-2004 0 40 80 120 160 200 0 1 2 3 4 5 02468 04 08 01 2 01 6 02 0 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150 i d = 0.5 i d [cont.] v gs = 10v 200160 120 8040 0 1.151.10 1.05 1.00 0.95 0.90 1.15 1.10 1.05 1.00 0.95 0.90 1.21.1 1.0 0.9 0.8 0.7 0.6 200160 120 8040 0 200160 120 8040 0 100 8060 40 20 0 2.52.0 1.5 1.0 0.5 0.0 v ds > i d (on) x r ds (on)max. 250sec. pulse test @ <0.5 % duty cycle v gs =10v v gs =20v v gs =6.5v, 7v, 10v & 15v 6v 5.5v 4.5v 5v v gs =15v 10v t j = -55c t j = +125c t j = +125c t j = +25c t j = -55c normalized to v gs = 10v @ 0.5 i d [cont.] 7v 6.5v 6v 5.5v 4.5v 5v downloaded from: http:///
v ds , drain-to-source voltage (volts) v ds , drain-to-source voltage (volts) figure 10, maximum safe operating area figure 11, typical capacitance vs drain-to-source voltage q g , total gate charge (nc) v sd , source-to-drain voltage (volts) figure 12, gate charges vs gate-to-source voltage figure 13, typical source-drain diode forward voltage v gs , gate-to-source voltage (volts) i d , drain current (amperes) i dr , reverse drain current (amperes) c, capacitance (pf) APT40M35JVFR 050-5892 rev a 7-2004 sot-227 (isotop ? ) package outline 31.5 (1.240)31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307)8.2 (.322) 30.1 (1.185)30.3 (1.193) 38.0 (1.496)38.2 (1.504) 14.9 (.587)15.1 (.594) 11.8 (.463)12.2 (.480) 8.9 (.350)9.6 (.378) hex nut m4 (4 places) 0.75 (.030)0.85 (.033) 12.6 (.496)12.8 (.504) 25.2 (0.992)25.4 (1.000) 1.95 (.077)2.14 (.084) * source drain gate * r = 4.0 (.157) (2 places) 4.0 (.157)4.2 (.165) (2 places) w=4.1 (.161)w=4.3 (.169) h=4.8 (.187)h=4.9 (.193) (4 places) 3.3 (.129)3.6 (.143) * source source terminals are shortedinternally. current handling capability is equal for either source terminal. isotop ? is a registered trademark of sgs thomson. "ul recognized" file no. e145592 apts products are covered by one or more of u.s.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. us and foreign patents pending. all rights reserved. t c =+25c t j =+150c single pulse operation here limited by r ds (on) 1 5 10 50 100 400 .01 .1 1 10 50 0 250 500 750 1000 1250 0.2 0.4 0.6 0.8 1.0 1.2 1.4 60,00010,000 5,0001,000 500300 100 5010 51 v ds =80v v ds =320v 10s10ms 100ms dc 1ms t j =+150c t j =+25c c rss c oss c iss 400100 5010 51 .5.1 2016 12 84 0 100s v ds =200v i d = 0.5 i d [cont.] downloaded from: http:///
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